IXFR 140N20P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
ISOPLUS 247 OUTLINE
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
R G = 3.3 ? (External)
50
84
7500
1800
280
30
35
150
90
240
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
50
100
nC
nC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
R thJC
0.5 ° C/W
Dim.
Millimeter
Inches
R thCS
ISOPLUS247
0.15
° C/W
A
Min. Max.
4.83 5.21
Min. Max.
.190 .205
A 1
A 2
b
2.29 2.54
1.91 2.16
1.14 1.40
.090 .100
.075 .085
.045 .055
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. typ. Max.
b 1
b 2
C
D
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
.075 .084
.115 .123
.024 .031
.819 .840
I S
I SM
V SD
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
90
280
1.5
A
A
V
E
e
L
L1
Q
R
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
t rr
Q RM
I RM
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
0.6
6
200 ns
μ C
Α
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
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相关代理商/技术参数
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